IRF830 Datasheet (nELL) - N-Channel Power MOSFET

IRF830, N-Channel Power MOSFET

The Nell IRF830 are N-Channel enhancement mode silicon gate power field effect transistors.

They are designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

They are designed as an extremely efficient and reliable device for use in a wi

IRF830 Features

* RDS(ON) = 1.5Ω @ VGS = 10V Ultra low gate charge(38nC Max.) Low reverse transfer capacitance (CRSS = 68pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (IRF830A) D (Drain) G (Gate) S (Source) PRODUCT