NP35S03QR Datasheet (natlinear) - 30V N-Channel Enhancement Mode MOSFET

NP35S03QR, 30V N-Channel Enhancement Mode MOSFET

Schematic diagram The NP35S03QR uses SGT technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency

NP35S03QR Features

* VDS =30V，ID =35A RDS(ON)=7.3mΩ (typical) @ VGS=10V RDS(ON)=10 mΩ (typical) @ VGS=4.5V

* Excellent gate charge x RDS(ON) product(FOM)

* Very low on-resistance RDS(ON)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Application

* DC/DC Converter