GAN3R2-100CBE GaN FET

nexperia

Description

WLCSP8 GAN3R2-100CBE 100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP) 27 April 2023 Product.
The GAN3R2-100CBE is a a general purpose 100 V, 3.

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Datasheet Specifications

Part number: GAN3R2-100CBE
Manufacturer: nexperia ↗
File Size: 286.48 KB
Datasheet: GAN3R2-100CBE-nexperia.pdf
Description: GaN FET

Features

* Enhancement mode - normally-off power switch
* Ultra high frequency switching capability
* No body diode
* Low gate charge, low output charge

Applications

* ESD protection
* RoHS, Pb-free, REACH-compliant
* High efficiency and high power density
* Wafer Level Chip-Scale Package (WLCSP) 3.5 mm x 2.13 mm 3. Applications
* High power density and high efficiency power conversion
* AC-to-DC converters, (seco

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GAN3R2-100CBE GaN FET nexperia

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