* Enhancement mode - normally-off power switch
* Ultra high frequency switching capability
* No body diode
* Low gate charge, low output charge
* Qualified for standard applications
* ESD protection
* RoHS, Pb-free, REACH-compliant
* Hi
GAN7R0-150LBE Datasheet (262.81 KB)
GAN7R0-150LBE
262.81 KB
Gan fet.
FCLGA GAN7R0-150LBE 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package 24 April 2023 Product d.
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