GAN7R0-150LBE GaN FET

nexperia

Description

FCLGA GAN7R0-150LBE 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package 24 April 2023 Product d.
The GAN7R0-150LBE is a general purpose 150 V, 7 mΩ Gallium Nitride (GaN) FET in a Land Grid Array (LGA) package.

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Datasheet Specifications

Part number: GAN7R0-150LBE
Manufacturer: nexperia ↗
File Size: 262.81 KB
Datasheet: GAN7R0-150LBE-nexperia.pdf
Description: GaN FET

Features

* Enhancement mode - normally-off power switch
* Ultra high frequency switching capability
* No body diode
* Low gate charge, low output charge

Applications

* ESD protection
* RoHS, Pb-free, REACH-compliant
* High efficiency and high power density
* Land Grid Array (LGA) package 2.2 mm x 3.2 mm x 0.774 mm 3. Applications
* High power density and high efficiency power conversion
* AC-to-DC converters, (sec

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