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NGW30T65M3DFP Datasheet - nexperia

NGW30T65M3DFP - 650V 30A trench field-stop IGBT

The NGW30T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring thirdgeneration technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW30T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs.

NGW30T65M3DFP Features

* Device current is rated at 30 A

* Low conduction and switching losses

* Stable and tight parameters for easy parallel operation

* Maximum junction temperature 175 °C

* Fully rated and fast reverse recovery diode

* 5 μs short circuit withstand time

NGW30T65M3DFP-nexperia.pdf

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Datasheet Details

Part number:

NGW30T65M3DFP

Manufacturer:

nexperia ↗

File Size:

363.86 KB

Description:

650v 30a trench field-stop igbt.

NGW30T65M3DFP Distributor

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