NGW30T65M3DFP Datasheet - nexperia

NGW30T65M3DFP 650V 30A trench field-stop IGBT

The NGW30T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring thirdgeneration technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW30T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs.

NGW30T65M3DFP Features

* Device current is rated at 30 A

* Low conduction and switching losses

* Stable and tight parameters for easy parallel operation

* Maximum junction temperature 175 °C

* Fully rated and fast reverse recovery diode

* 5 μs short circuit withstand time

NGW30T65M3DFP-nexperia.pdf