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NGW30T65M3DFP Datasheet - nexperia

650V 30A trench field-stop IGBT

NGW30T65M3DFP Features

* Device current is rated at 30 A

* Low conduction and switching losses

* Stable and tight parameters for easy parallel operation

* Maximum junction temperature 175 °C

* Fully rated and fast reverse recovery diode

* 5 μs short circuit withstand time

NGW30T65M3DFP General Description

The NGW30T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring thirdgeneration technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW30T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs.

NGW30T65M3DFP Datasheet (363.86 KB)

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Datasheet Details

Part number:

NGW30T65M3DFP

Manufacturer:

nexperia ↗

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363.86 KB

Description:

650v 30a trench field-stop igbt.
TO-247-3 NGW30T65M3DFP 650 V, 30 A trench field-stop IGBT with full rated silicon diode Rev. 1 17 January 2025 Product data sheet 1. Ge.

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NGW30T65M3DFP Features

NGW30T65M3DFP General Description

Datasheet Details

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