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NGW30T65M3DFP - 650V 30A trench field-stop IGBT

nexperia

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Datasheet Details

Part number	NGW30T65M3DFP
Manufacturer	nexperia ↗
File Size	363.86 KB
Description	650V 30A trench field-stop IGBT
Datasheet	NGW30T65M3DFP-nexperia.pdf

NGW30T65M3DFP Product details

Description

The NGW30T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring thirdgeneration technology.

Features

Device current is rated at 30 A.
Low conduction and switching losses.
Stable and tight parameters for easy parallel operation.
Maximum junction temperature 175 °C.
Fully rated and fast reverse recovery diode.
5 μs short circuit withstand time.
HV-H3TRB qualified 3.

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Published: Apr 23, 2025 |