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NGW50T65M3DFP

650V 50A trench field-stop IGBT

Image Manufacturer B2B MPN Description Distributor Stock Quantity Price Buy Now
Distributor Nexperia NGW50T65M3DFPQ NGW50T65M3DFP/SOT429-2/TO247-3 DigiKey 0 2700 units
$2.37

NGW50T65M3DFP Datasheet (373.42 KB)

Preview of NGW50T65M3DFP PDF Datasheet

Datasheet Details

Part number:

NGW50T65M3DFP

Manufacturer:

nexperia ↗

File Size:

373.42 KB

Description:

650v 50a trench field-stop igbt

NGW50T65M3DFP Features

* Device current is rated at 50 A

* Low conduction and switching losses

* Stable and tight parameters for easy parallel operation

* Maximum junction temperature 175 °C

* Fully rated and fast reverse recovery diode

* 5 μs short circuit withstand time

NGW50T65M3DFP General Description

The NGW50T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μ.

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NGW50T65M3DFP 650V 50A trench field-stop IGBT nexperia

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NGW50T65M3DFP Distributor

Distributor
Nexperia
NGW50T65M3DFPQ
NGW50T65M3DFP/SOT429-2/TO247-3 - Rail/Tube (Alt: NGW50T65M3DFPQ)
Avnet Americas
0 In Stock
Qty : 3600 units
Unit Price : $2.43
Distributor
Nexperia
NGW50T65M3DFPQ
IGBTs 650 V, 60 A trench field-stop IGBT with full rated silicon diode
Mouser Electronics
0 In Stock
Qty : 1 units
Unit Price : $4.82