NGW50T65M3DFP Datasheet - nexperia

650V 50A trench field-stop IGBT

NGW50T65M3DFP Features

* Device current is rated at 50 A

* Low conduction and switching losses

* Stable and tight parameters for easy parallel operation

* Maximum junction temperature 175 °C

* Fully rated and fast reverse recovery diode

* 5 μs short circuit withstand time

NGW50T65M3DFP General Description

The NGW50T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μ.

NGW50T65M3DFP Datasheet (373.42 KB)

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Datasheet Details

Part number:

NGW50T65M3DFP

Manufacturer:

nexperia ↗

File Size:

373.42 KB

Description:

650v 50a trench field-stop igbt.
TO-247-3 NGW50T65M3DFP 650 V, 50 A trench field-stop IGBT with full rated silicon diode Rev. 1.1 7 March 2025 Product data sheet 1. Gen.

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NGW50T65M3DFP 650V 50A trench field-stop IGBT nexperia

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NGW50T65M3DFP Features

NGW50T65M3DFP General Description

Datasheet Details

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