NGW40T65H3DFP

650V 40A trench field-stop IGBT

nexperia

NGW40T65H3DFP Features

* Device current is rated at 40 A

* Low conduction and switching losses

* Stable and tight parameters for easy parallel operation

* Maximum junction temperature 175 °C

* Fully rated and fast reverse recovery diode

* HV-H3TRB qualified 3. Applications

NGW40T65H3DFP General Description

The NGW40T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650 V, 40 A IGBT is optim.

NGW40T65H3DFP Datasheet (258.35 KB)

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Datasheet Details

Part number:

NGW40T65H3DFP

Manufacturer:

nexperia ↗

File Size:

258.35 KB

Description:

650v 40a trench field-stop igbt.
TO-247-3L NGW40T65H3DFP 650 V, 40 A trench field-stop IGBT with full rated silicon diode Rev. 1

* 17 January 2025 Product data sheet 1. G.

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NGW40T65H3DFP 650V 40A trench field-stop IGBT nexperia

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NGW40T65H3DFP Features

NGW40T65H3DFP General Description

Datasheet Details

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