NGW40T65M3DFP Datasheet - nexperia

NGW40T65M3DFP - 650V 40A trench field-stop IGBT

The NGW40T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μ.

NGW40T65M3DFP Features

* Device current is rated at 40 A

* Low conduction and switching losses

* Stable and tight parameters for easy parallel operation

* Maximum junction temperature 175 °C

* Fully rated and soft fast reverse recovery diode

* 5 μs short circuit withstand t

NGW40T65M3DFP-nexperia.pdf