NGW50T65H3DFP Datasheet, Igbt, nexperia

NGW50T65H3DFP Features

• Igbt
• Collector current (IC) rated at 50 A
• Low conduction and switching losses
• Stable and tight parameters for easy parellel operation
• Maximum junction

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Part number:

NGW50T65H3DFP

Manufacturer:

nexperia ↗

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362.61kb

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📄 Datasheet

Description:

50a high speed trench field-stop igbt. The NGW50T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring thirdgeneration technology. It combines carrier stor

NGW50T65H3DFP Application

• Applications 2. Features and benefits
• Collector current (IC) rated at 50 A
• Low conduction and switching losses
• Stabl

TAGS

NGW50T65H3DFP

nexperia

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