NGW50T65H3DFP Datasheet (nexperia) - 50A high speed trench field-stop IGBT

NGW50T65H3DFP, 50A high speed trench field-stop IGBT

The NGW50T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring thirdgeneration technology.

It combines carrier stored trench-gate and field-stop (FS) structures.

The NGW50T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses.

This hard-switching 650 V, 50 A IGBT is optimi

NGW50T65H3DFP Features

* Collector current (IC) rated at 50 A

* Low conduction and switching losses

* Stable and tight parameters for easy parellel operation

* Maximum junction temperature of 175 °C

* Fully rated as a soft fast reverse recovery diode

* RoHS compliant, lead-f