NGW60T65M3DFP Datasheet - nexperia

NGW60T65M3DFP 650V 60A trench field-stop IGBT

The NGW60T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW60T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a shortcircuit withstand time of 5 μs.

NGW60T65M3DFP Features

* Device current is rated at 60 A

* Low conduction and switching losses

* Stable and tight parameters for easy parallel operation

* Maximum junction temperature 175 °C

* Fully rated and fast reverse recovery diode

* 5 μs short circuit withstand time

NGW60T65M3DFP Datasheet (268.06 KB)