NGW60T65M3DFP

650V 60A trench field-stop IGBT

nexperia

NGW60T65M3DFP Features

* Device current is rated at 60 A

* Low conduction and switching losses

* Stable and tight parameters for easy parallel operation

* Maximum junction temperature 175 °C

* Fully rated and fast reverse recovery diode

* 5 μs short circuit withstand time

NGW60T65M3DFP General Description

The NGW60T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW60T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a shortcircuit withstand time of 5 μs.

NGW60T65M3DFP Datasheet (268.06 KB)

NGW60T65M3DFP Datasheet Preview — Preview of NGW60T65M3DFP PDF

Datasheet Details

Part number:

NGW60T65M3DFP

Manufacturer:

nexperia ↗

File Size:

268.06 KB

Description:

650v 60a trench field-stop igbt.
TO-247-3L NGW60T65M3DFP 650 V, 60 A trench field-stop IGBT with full rated silicon diode Rev. 1

* 17 January 2025 Product data sheet 1. G.

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NGW60T65M3DFP 650V 60A trench field-stop IGBT nexperia

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NGW60T65M3DFP Features

NGW60T65M3DFP General Description

Datasheet Details

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