NGW60T65M3DFP 650V 60A trench field-stop IGBT

nexperia

Description

TO-247-3L NGW60T65M3DFP 650 V, 60 A trench field-stop IGBT with full rated silicon diode Rev.1 * 17 January 2025 Product data sheet 1.G.
The NGW60T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology.

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Datasheet Specifications

Part number: NGW60T65M3DFP
Manufacturer: nexperia ↗
File Size: 268.06 KB
Datasheet: NGW60T65M3DFP-nexperia.pdf
Description: 650V 60A trench field-stop IGBT

Features

* Device current is rated at 60 A
* Low conduction and switching losses
* Stable and tight parameters for easy parallel operation
* Maximum junction temperature 175 °C
* Fully rated and fast reverse recovery diode
* 5 μs short circuit withstand time

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