NGW40T65H3DHP Datasheet - nexperia

NGW40T65H3DHP 650V 40A trench field-stop IGBT

The NGW40T65H3DHP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65H3DHP is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650 V, 40 A IGBT is optim.

NGW40T65H3DHP Features

* IGBT collector current is rated at 40 A, diode forward current is rated at 20 A

* Low conduction and switching losses

* Stable and tight parameters for easy parallel operation

* Maximum junction temperature 175 °C

* Fully rated and fast reverse recovery dio

NGW40T65H3DHP Datasheet (258.06 KB)