NGW40T65H3DHP 650V 40A trench field-stop IGBT

nexperia

Description

TO-247-3L NGW40T65H3DHP 650 V, 40 A trench field-stop IGBT with half rated silicon diode Rev.1 * 17 January 2025 Product data sheet 1..
The NGW40T65H3DHP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology.

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Datasheet Specifications

Part number: NGW40T65H3DHP
Manufacturer: nexperia ↗
File Size: 258.06 KB
Datasheet: NGW40T65H3DHP-nexperia.pdf
Description: 650V 40A trench field-stop IGBT

Features

* IGBT collector current is rated at 40 A, diode forward current is rated at 20 A
* Low conduction and switching losses
* Stable and tight parameters for easy parallel operation
* Maximum junction temperature 175 °C
* Fully rated and fast reverse recovery dio

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