NGW40T65H3DHP Datasheet - nexperia

NGW40T65H3DHP, 650V 40A trench field-stop IGBT

TO-247-3L NGW40T65H3DHP 650 V, 40 A trench field-stop IGBT with half rated silicon diode Rev.1 * 17 January 2025 Product data sheet 1..
The NGW40T65H3DHP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology.

NGW40T65H3DHP-nexperia.pdf

NGW40T65H3DHP Datasheet Preview — Preview of NGW40T65H3DHP PDF

Datasheet Details

Part number:

NGW40T65H3DHP

Manufacturer:

nexperia ↗

File Size:

258.06 KB

Description:

650V 40A trench field-stop IGBT

Features

* IGBT collector current is rated at 40 A, diode forward current is rated at 20 A
* Low conduction and switching losses
* Stable and tight parameters for easy parallel operation
* Maximum junction temperature 175 °C
* Fully rated and fast reverse recovery dio

NGW40T65H3DHP Distributors

📁 Related Datasheet

📌 All Tags

NGW40T65H3DHP 650V 40A trench field-stop IGBT nexperia

nexperia NGW40T65H3DHP-like datasheet