NGW75T65H3DF

75A high speed trench field-stop IGBT

nexperia

NGW75T65H3DF Features

* Collector current (IC) rated at 75 A

* Low conduction and switching losses

* Stable and tight parameters for easy parallel operation

* Maximum junction temperature of 175 °C

* Fully rated as a soft fast reverse recovery diode

* RoHS compliant, lead-f

NGW75T65H3DF General Description

The NGW75T65H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DF is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650 V, 75 A IGBT is optimiz.

NGW75T65H3DF Datasheet (256.35 KB)

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Datasheet Details

Part number:

NGW75T65H3DF

Manufacturer:

nexperia ↗

File Size:

256.35 KB

Description:

75a high speed trench field-stop igbt.
TO-247-3L NGW75T65H3DF 650 V ,75 A high speed trench field-stop IGBT with full rated silicon diode Rev. 1

* 28 June 2024 Product data she.

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NGW75T65H3DF 75A high speed trench field-stop IGBT nexperia

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NGW75T65H3DF Features

NGW75T65H3DF General Description

Datasheet Details

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