NGW75T65H3DF Datasheet - nexperia

NGW75T65H3DF 75A high speed trench field-stop IGBT

The NGW75T65H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DF is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650 V, 75 A IGBT is optimiz.

NGW75T65H3DF Features

* Collector current (IC) rated at 75 A

* Low conduction and switching losses

* Stable and tight parameters for easy parallel operation

* Maximum junction temperature of 175 °C

* Fully rated as a soft fast reverse recovery diode

* RoHS compliant, lead-f

NGW75T65H3DF Datasheet (256.35 KB)