Datasheet4U.com

NGW75T65M3DFP - 650V 75A trench field-stop IGBT

nexperia

📥 Download Datasheet

NGW75T65M3DFP Datasheet Preview — Preview of NGW75T65M3DFP PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	NGW75T65M3DFP
Manufacturer	nexperia ↗
File Size	264.50 KB
Description	650V 75A trench field-stop IGBT
Datasheet	NGW75T65M3DFP-nexperia.pdf

NGW75T65M3DFP Product details

Description

The NGW75T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology.

Features

Device current is rated at 75 A.
Low conduction and switching losses.
Stable and tight parameters for easy parallel operation.
Maximum junction temperature 175 °C.
Fully rated and soft fast reverse recovery diode.
5 μs short circuit withstand time.
HV-H3TRB qualified 3.

📁 NGW75T65M3DFP Similar Datasheet

Other Datasheets by nexperia

NGW75T65H3DF - 75A high speed trench field-stop IGBT
NGW75T65H3DFP - 650V 75A trench field-stop IGBT
NGW30T65M3DFP - 650V 30A trench field-stop IGBT
NGW40T65H3DFP - 650V 40A trench field-stop IGBT
NGW40T65H3DHP - 650V 40A trench field-stop IGBT
NGW40T65M3DFP - 650V 40A trench field-stop IGBT

Published: May 6, 2025 |