NGW75T65M3DFP Datasheet (nexperia) - 650V 75A trench field-stop IGBT

NGW75T65M3DFP, 650V 75A trench field-stop IGBT

The NGW75T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology.

It combines carrier stored trench-gate and field-stop (FS) structures.

The NGW75T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a shortcircuit withstand time of 5 μs

NGW75T65M3DFP Features

* Device current is rated at 75 A

* Low conduction and switching losses

* Stable and tight parameters for easy parallel operation

* Maximum junction temperature 175 °C

* Fully rated and soft fast reverse recovery diode

* 5 μs short circuit withstand t