NGW75T65H3DFP Datasheet - nexperia

NGW75T65H3DFP 650V 75A trench field-stop IGBT

The NGW75T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650 V, 75 A IGBT is optim.

NGW75T65H3DFP Features

* Device current is rated at 75 A

* Low conduction and switching losses

* Stable and tight parameters for easy parallel operation

* Maximum junction temperature 175 °C

* Fully rated and fast reverse recovery diode

* HV-H3TRB qualified 3. Applications

NGW75T65H3DFP Datasheet (261.02 KB)