NGW75T65H3DFP

650V 75A trench field-stop IGBT

nexperia

NGW75T65H3DFP Features

* Device current is rated at 75 A

* Low conduction and switching losses

* Stable and tight parameters for easy parallel operation

* Maximum junction temperature 175 °C

* Fully rated and fast reverse recovery diode

* HV-H3TRB qualified 3. Applications

NGW75T65H3DFP General Description

The NGW75T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650 V, 75 A IGBT is optim.

NGW75T65H3DFP Datasheet (261.02 KB)

NGW75T65H3DFP Datasheet Preview — Preview of NGW75T65H3DFP PDF

Datasheet Details

Part number:

NGW75T65H3DFP

Manufacturer:

nexperia ↗

File Size:

261.02 KB

Description:

650v 75a trench field-stop igbt.
TO-247-3L NGW75T65H3DFP 650 V, 75 A trench field-stop IGBT with full rated silicon diode Rev. 1

* 17 January 2025 Product data sheet 1. G.

📁 Related Datasheet

NGW75T65H3DF 75A high speed trench field-stop IGBT (nexperia)

NGW30T65M3DFP 650V 30A trench field-stop IGBT (nexperia)

NGW40T65H3DFP 650V 40A trench field-stop IGBT (nexperia)

NGW40T65H3DHP 650V 40A trench field-stop IGBT (nexperia)

NGW40T65M3DFP 40A trench field-stop IGBT (nexperia)

NGW50T65H3DFP 50A high speed trench field-stop IGBT (nexperia)

NGW50T65M3DFP 650V 50A trench field-stop IGBT (nexperia)

NGW60T65M3DFP 650V 60A trench field-stop IGBT (nexperia)

NG-6901 NG 6901 (PerkinElmer Optoelectronics)

NG4U Relay (DB Lectro)

TAGS

NGW75T65H3DFP 650V 75A trench field-stop IGBT nexperia

Image Gallery

NGW75T65H3DFP Features

NGW75T65H3DFP General Description

Datasheet Details

File Size:

Description:

NGW75T65H3DFP Distributor