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NX3020NAKV Dual N-channel MOSFET

NX3020NAKV Description

NX3020NAKV 30 V, 200 mA dual N-channel Trench MOSFET 29 October 2013 Product data sheet 1.General .
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using.

NX3020NAKV Features

* Very fast switching
* Trench MOSFET technology
* ESD protection

NX3020NAKV Applications

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor VDS drain-source voltage Tj = 25 °C - - 30 V VGS gate-source

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