Datasheet Details
- Part number
- NX3020NAKS-Q
- Manufacturer
- nexperia ↗
- File Size
- 279.81 KB
- Datasheet
- NX3020NAKS-Q-nexperia.pdf
- Description
- 30V dual N-channel Trench MOSFET
NX3020NAKS-Q Description
NX3020NAKS-Q 30 V, dual N-channel Trench MOSFET 14 May 2025 Product data sheet 1.General .
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench.
NX3020NAKS-Q Features
* Logic-level compatible
* Extended temperature range Tj = 175 °C
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection
NX3020NAKS-Q Applications
* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
Per transistor
VDS
drain-source voltage Tj = 25 °C
-
-
30
V
VGS
gate-s
📁 Related Datasheet
📌 All Tags
NX3020NAKS-Q Stock/Price