NX3020NAKS-Q 30V dual N-channel Trench MOSFET

nexperia

Description

NX3020NAKS-Q 30 V, dual N-channel Trench MOSFET 14 May 2025 Product data sheet 1.General .
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench.

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Datasheet Specifications

Part number: NX3020NAKS-Q
Manufacturer: nexperia ↗
File Size: 286.51 KB
Datasheet: NX3020NAKS-Q-nexperia.pdf
Description: 30V dual N-channel Trench MOSFET

Features

* Logic-level compatible
* Extended temperature range Tj = 175 °C
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection

Applications

* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor VDS drain-source voltage Tj = 25 °C - - 30 V VGS gate-s

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30V dual N-channel Trench MOSFET nexperia

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