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NX3020NAKW-Q 30V N-channel Trench MOSFET

NX3020NAKW-Q Description

NX3020NAKW-Q 30 V, N-channel Trench MOSFET 14 May 2025 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC70) Surface-Mounted Device (SMD) plastic package using Trench MOSFE.

NX3020NAKW-Q Features

* Logic-level compatible
* Extended temperature range Tj = 175 °C
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection

NX3020NAKW-Q Applications

* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 30 V VGS gate-source voltage -

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