NX3020NAKQB-Q 30V N-channel Trench MOSFET

nexperia

NX3020NAKQB-Q Description

NX3020NAKQB-Q 30 V, N-channel Trench MOSFET 11 August 2025 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1110D-3 (SOT8015) Surface-Mounted Device (SMD) plastic package u.

NX3020NAKQB-Q Features

* Logic-level compatible
* Extended temperature range Tj = 175 °C
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection
* Side wettable flanks for optical solder inspection

NX3020NAKQB-Q Applications

* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 30 V VGS gate-source voltage -

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Datasheet Details

Part number: NX3020NAKQB-Q
Manufacturer: nexperia ↗
File Size: 293.04 KB
Datasheet: NX3020NAKQB-Q-nexperia.pdf
Description: 30V N-channel Trench MOSFET

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