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NX7002BKXB dual N-channel MOSFET

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Description

NX7002BKXB 60 V, dual N-channel Trench MOSFET 30 June 2015 Product data sheet 1.General .
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic pack.

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Features

* Logic-level compatible
* Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm
* Trench MOSFET technology

Applications

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor VDS drain-source voltage Tj = 25 °C - - 60 V VGS gate-source

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