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PBSS4041SP PNP/PNP transistor

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Description

PBSS4041SP 60 V, 5.9 A PNP/PNP low VCEsat (BISS) transistor Rev.2 * 18 October 2010 Product data sheet 1.Product profile 1.1 General de.
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

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Features

* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conv

Applications

* Loadswitch
* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e. g. motors, fans) 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO IC ICM RCEsat collector-emitter vo

PBSS4041SP Distributors

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PBSS4041SP PNP PNP transistor nexperia
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