* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conv
PBSS4041SP Datasheet (769.25 KB)
PBSS4041SP
769.25 KB
Pnp/pnp transistor.
PBSS4041SP
60 V, 5.9 A PNP/PNP low VCEsat (BISS) transistor
Rev. 2
* 18 October 2010
Product data sheet
1. Product profile
1.1 General de.
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