PMDXB1200UPE dual P-channel MOSFET

nexperia

Description

PMDXB1200UPE 30 V, dual P-channel Trench MOSFET 25 March 2015 Product data sheet 1.General .
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic pack.

📥 Download Datasheet

PMDXB1200UPE Datasheet Preview — Preview of PMDXB1200UPE PDF

Datasheet Specifications

Part number: PMDXB1200UPE
Manufacturer: nexperia ↗
File Size: 718.12 KB
Datasheet: PMDXB1200UPE-nexperia.pdf
Description: dual P-channel MOSFET

Features

* Low threshold voltage
* Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm
* Trench MOSFET technology

Applications

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current

PMDXB1200UPE Distributors

📁 Related Datasheet

PMDXB550UNE PMDXB600UNE PMDXB950UPE PMD02N60N PMD03N80R PMD04N65M

📌 All Tags

PMDXB1200UPE dual P-channel MOSFET nexperia

nexperia PMDXB1200UPE-like datasheet