PMDXB600UNE

Dual N-Channel MOSFET

nexperia

* Trench MOSFET technology

* Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm

* Exposed drain pad for excellent thermal conduction

* ElectroStatic Discharge (ESD) protection > 1 kV HBM

* Drain-source on-state resistance RDSon = 470

PMDXB600UNE

721.63 KB

Dual n-channel mosfet.

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PMDXB600UNE Dual N-Channel MOSFET nexperia

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