PMDXB600UNE - Dual N-Channel MOSFET

nexperia

PMDXB600UNE Datasheet Preview — Preview of PMDXB600UNE PDF

Datasheet Details

Part number	PMDXB600UNE
Manufacturer	nexperia ↗
File Size	721.63 KB
Description	Dual N-Channel MOSFET
Datasheet	PMDXB600UNE-nexperia.pdf

PMDXB600UNE Product details

Description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Trench MOSFET technology.
Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm.
Exposed drain pad for excellent thermal conduction.
ElectroStatic Discharge (ESD) protection > 1 kV HBM.
Drain-source on-state resistance RDSon = 470 mΩ 3.

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Published: Jul 5, 2019 |