PMDXB950UPE dual P-channel MOSFET

nexperia

Description

PMDXB950UPE 20 V, dual P-channel Trench MOSFET 30 June 2015 Product data sheet 1.General .
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic pack.

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Datasheet Specifications

Part number: PMDXB950UPE
Manufacturer: nexperia ↗
File Size: 727.39 KB
Datasheet: PMDXB950UPE-nexperia.pdf
Description: dual P-channel MOSFET

Features

* Trench MOSFET technology
* Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
* Exposed drain pad for excellent thermal conduction
* ElectroStatic Discharge (ESD) protection > 1 kV HBM
* Drain-source on-state resistance RDSon = 1.02

Applications

* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current

PMDXB950UPE Distributors

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PMDXB950UPE dual P-channel MOSFET nexperia

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