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PMPB29XPEA P-channel MOSFET

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Description

PMPB29XPEA 20 V, P-channel Trench MOSFET 27 March 2018 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package.

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Features

* Low threshold voltage
* Trench MOSFET technology
* Side wettable flanks for optical solder inspection
* ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2)

Applications

* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-s

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