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PMPB55ENEA N-channel MOSFET

PMPB55ENEA Description

PMPB55ENEA 60 V, N-channel Trench MOSFET 6 June 2016 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package.

PMPB55ENEA Features

* Trench MOSFET technology
* Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
* Tin-plated 100 % solderable side pads for optical solder inspection
* ElectroStatic Discharge (ESD) protection > 2 kV

PMPB55ENEA Applications

* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-so

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