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PMZB200UNE N-channel MOSFET

PMZB200UNE Description

PMZB200UNE 30 V, N-channel Trench MOSFET 12 March 2015 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package u.

PMZB200UNE Features

* Very fast switching
* Low threshold voltage
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection: 2 kV HBM

PMZB200UNE Applications

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-sou

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