PMZB950UPE

P-channel MOSFET

nexperia

* Trench MOSFET technology

* Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.37 mm

* ElectroStatic Discharge (ESD) protection > 1 kV HBM

* Drain-source on-state resistance RDSon = 1.02 Ω 3. Applications

* Relay driver

* High-spe

PMZB950UPE

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P-channel mosfet.

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PMZB950UPE P-channel MOSFET nexperia

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