PMZB950UPE P-channel MOSFET

nexperia

Description

PMZB950UPE 20 V, P-channel Trench MOSFET 28 July 2014 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package u.

📥 Download Datasheet

PMZB950UPE Datasheet Preview — Preview of PMZB950UPE PDF

Datasheet Specifications

Part number: PMZB950UPE
Manufacturer: nexperia ↗
File Size: 712.11 KB
Datasheet: PMZB950UPE-nexperia.pdf
Description: P-channel MOSFET

Features

* Trench MOSFET technology
* Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.37 mm
* ElectroStatic Discharge (ESD) protection > 1 kV HBM

Applications

* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-s

PMZB950UPE Distributors

📁 Related Datasheet

PMZB1200UPE PMZB150UNE PMZB200UNE PMZB290UN PMZB290UNE PMZB290UNE2

📌 All Tags

PMZB950UPE P-channel MOSFET nexperia

nexperia PMZB950UPE-like datasheet