PSC1065B1

10A SiC Schottky diode

nexperia

PSC1065B1 Features

* Zero forward and reverse recovery

* Temperature independent fast and smooth switching performance

* Outstanding figure-of-merit (Qc x VF)

* High IFSM capability

* High power density

* Reduced system costs

* System miniaturization

* Re

PSC1065B1 General Description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The Merged PiN Schottky (MPS) diode delivered as bare die in Tape and Reel (T & R) offers temperature independent capacitive turnoff, zero recove.

PSC1065B1 Datasheet (197.65 KB)