PSC1065H-Q Datasheet - nexperia

PSC1065H-Q 10A SiC Schottky diode

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package offers temperature independ.

PSC1065H-Q Features

* Reduced system costs

* Temperature independent fast and smooth switching performance

* Outstanding figure-of-merit (Qc x VF)

* High IFSM capability

* High power density

* System miniaturization

* Reduced EMI

* Qualified according to A

PSC1065H-Q-nexperia.pdf