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PSC1065H-Q - 10A SiC Schottky diode

Datasheet Summary

Description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications.

Features

  • Reduced system costs.
  • Temperature independent fast and smooth switching performance.
  • Outstanding figure-of-merit (Qc x VF).
  • High IFSM capability.
  • High power density.
  • System miniaturization.
  • Reduced EMI.
  • Qualified according to AEC-Q101 and recommended for use in automotive.

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Datasheet preview – PSC1065H-Q

Datasheet Details

Part number PSC1065H-Q
Manufacturer nexperia
File Size 257.74 KB
Description 10A SiC Schottky diode
Datasheet download datasheet PSC1065H-Q Datasheet
Additional preview pages of the PSC1065H-Q datasheet.

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Full PDF Text Transcription

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PSC1065H-Q 650 V, 10 A SiC Schottky diode in DPAK R2P for automotive applications 6 June 2024 Product data sheet 1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM. 2.
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