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PSC1065H-Q 10A SiC Schottky diode

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Description

PSC1065H-Q 650 V, 10 A SiC Schottky diode in DPAK R2P for automotive applications 6 June 2024 Product data sheet 1.General .
Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applicati.

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Features

* Reduced system costs
* Temperature independent fast and smooth switching performance
* Outstanding figure-of-merit (Qc x VF)
* High IFSM capability
* High power density
* System miniaturization
* Reduced EMI
* Qualified according to A

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