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PSC1065B1-Q - 10A SiC Schottky diode

Datasheet Summary

Description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications.

Features

  • Zero forward and reverse recovery.
  • Temperature independent fast and smooth switching performance.
  • Outstanding figure-of-merit (Qc x VF).
  • High IFSM capability.
  • High power density.
  • Reduced system costs.
  • System miniaturization.
  • Reduced EMI.
  • Qualified according to AEC-Q101 in SMD package with epoxy mold compound and recommended for use in automotive.

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Datasheet Details

Part number PSC1065B1-Q
Manufacturer nexperia
File Size 229.38 KB
Description 10A SiC Schottky diode
Datasheet download datasheet PSC1065B1-Q Datasheet
Additional preview pages of the PSC1065B1-Q datasheet.

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PSC1065B1-Q PSC1065B1-Q 650 V, 10 A SiC Schottky diode in bare die for automotive applications 14 June 2024 Product data sheet 1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The Merged PiN Schottky (MPS) diode delivered as bare die in Tape and Reel (T & R) offers temperature independent capacitive turnoff, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF) and improves the robustness expressed in a high IFSM. 2.
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