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PSC1065K 10A SiC Schottky diode

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Description

PSC1065K 650 V, 10 A SiC Schottky diode in TO-220-2 R2P 19 April 2023 Product data sheet 1.General .
Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applicati.

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Features

* Zero forward and reverse recovery
* Temperature independent fast and smooth switching performance
* Outstanding figure-of-merit (Qc x VF)
* High IFSM capability
* High power density
* Reduced system costs
* System miniaturization
* Re

Applications

* The SiC Schottky diode is encapsulated in a Real-2-Pin (R2P) TO-220-2 (SOT8021) through-hole power plastic package. The product offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS)

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