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PSC1065K - 10A SiC Schottky diode

Datasheet Summary

Description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications.

The SiC Schottky diode is encapsulated in a Real-2-Pin (R2P) TO-220-2 (SOT8021) through-hole power plastic package.

Features

  • Zero forward and reverse recovery.
  • Temperature independent fast and smooth switching performance.
  • Outstanding figure-of-merit (Qc x VF).
  • High IFSM capability.
  • High power density.
  • Reduced system costs.
  • System miniaturization.
  • Reduced EMI 3.

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Datasheet preview – PSC1065K

Datasheet Details

Part number PSC1065K
Manufacturer nexperia
File Size 206.67 KB
Description 10A SiC Schottky diode
Datasheet download datasheet PSC1065K Datasheet
Additional preview pages of the PSC1065K datasheet.

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Full PDF Text Transcription

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PSC1065K 650 V, 10 A SiC Schottky diode in TO-220-2 R2P 19 April 2023 Product data sheet 1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode is encapsulated in a Real-2-Pin (R2P) TO-220-2 (SOT8021) through-hole power plastic package. The product offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM. 2.
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