PSC1065J-Q

650V 10A SiC Schottky diode

nexperia

PSC1065J-Q Features

* Reduced system costs

* Temperature independent fast and smooth switching performance

* Outstanding figure-of-merit (Qc x VF)

* High IFSM capability

* High power density

* System miniaturization

* Reduced EMI

* Qualified according to A

PSC1065J-Q General Description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic package offers temperature in.

PSC1065J-Q Datasheet (256.75 KB)