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PSC1065J-Q - 650V 10A SiC Schottky diode

Datasheet Summary

Description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications.

Features

  • Reduced system costs.
  • Temperature independent fast and smooth switching performance.
  • Outstanding figure-of-merit (Qc x VF).
  • High IFSM capability.
  • High power density.
  • System miniaturization.
  • Reduced EMI.
  • Qualified according to AEC-Q101 and recommended for use in automotive.

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Datasheet preview – PSC1065J-Q

Datasheet Details

Part number PSC1065J-Q
Manufacturer nexperia
File Size 256.75 KB
Description 650V 10A SiC Schottky diode
Datasheet download datasheet PSC1065J-Q Datasheet
Additional preview pages of the PSC1065J-Q datasheet.

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Full PDF Text Transcription

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PSC1065J-Q 650 V, 10 A SiC Schottky diode in D2PAK R2P for automotive applications 7 March 2025 Product data sheet 1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM. 2.
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