PSC1065H 10A SiC Schottky diode

nexperia

Description

PSC1065H 650 V, 10 A SiC Schottky diode in DPAK R2P 8 February 2024 Product data sheet 1.General .
Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applicati.

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Datasheet Specifications

Part number: PSC1065H
Manufacturer: nexperia ↗
File Size: 256.98 KB
Datasheet: PSC1065H-nexperia.pdf
Description: 10A SiC Schottky diode

Features

* Zero forward and reverse recovery
* Temperature independent fast and smooth switching performance
* Outstanding figure-of-merit (Qc x VF)
* High IFSM capability
* High power density
* Reduced system cost
* System miniaturization
* Red

Applications

* The SiC Schottky diode encapsulated in a Real-2-Pin R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode impr

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PSC1065H 10A SiC Schottky diode nexperia

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