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PE3080K N-Channel Enhancement Mode Power MOSFET

PE3080K Description

PE3080K N-Channel Enhancement Mode Power MOSFET .
The PE3080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

PE3080K Features

* VDS =30V,ID =80A RDS(ON) < 7.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation Schematic diagram

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Datasheet Details

Part number
PE3080K
Manufacturer
semi one
File Size
247.89 KB
Datasheet
PE3080K-semione.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET semi one
semi one PE3080K-like datasheet