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PE3409 P-Channel Enhancement Mode Power MOSFET

PE3409 Description

PE3409 P-Channel Enhancement Mode Power MOSFET .
The PE3409 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

PE3409 Features

* VDS =-30V,ID =-5.5A RDS(ON) < 46mΩ @ VGS=-10V RDS(ON) < 70mΩ @ VGS=-4.5V
* High density cell design for ultra low Rdson

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Datasheet Details

Part number
PE3409
Manufacturer
semi one
File Size
861.45 KB
Datasheet
PE3409-semione.pdf
Description
P-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET semi one
semi one PE3409-like datasheet