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PE60N70 - N-Channel Enhancement Mode Power MOSFET

semi one

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Datasheet Details

Part number	PE60N70
Manufacturer	semi one
File Size	955.09 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE60N70-semione.pdf

PE60N70 Product details

Description

The PE60N70 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 60V,ID =65A RDS(ON) < 12mΩ @ VGS=10V (Typ:10.2mΩ).
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.

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Published: Dec 3, 2018 |