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PED3310M N-Channel Enhancement Mode Power MOSFET

PED3310M Description

PED3310M N-Channel Enhancement Mode Power MOSFET .
The PED3310M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

PED3310M Features

* VDS = 20V,ID =9A RDS(ON) < 20mΩ @ VGS=2.5V RDS(ON) < 15mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High Power and current handing capability
* Lead free product is acquired

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Datasheet Details

Part number
PED3310M
Manufacturer
semi one
File Size
1.33 MB
Datasheet
PED3310M-semione.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET semi one
semi one PED3310M-like datasheet