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PED3312M N-Channel Enhancement Mode Power MOSFET

PED3312M Description

N-Channel Enhancement Mode Power MOSFET .
The PED3312M uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

PED3312M Features

* VDS = 18V, ID = 22 A RDS(ON) < 4.3mΩ @ VGS=4.5V RDS(ON) < 4.6mΩ @ VGS=3.8V RDS(ON) < 5.0mΩ @ VGS=3.0V RDS(ON) < 6.8mΩ @ VGS=2.5V ESD Rating: 4000V HBM
* High Power and current handing capability
* Lead free product is acquired

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Datasheet Details

Part number
PED3312M
Manufacturer
semi one
File Size
612.64 KB
Datasheet
PED3312M-semione.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET semi one
semi one PED3312M-like datasheet