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PED8810M N-Channel Enhancement Mode Power MOSFET

PED8810M Description

PED8810M N-Channel Enhancement Mode Power MOSFET .
The PED8810M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

PED8810M Features

* VDS = 20V,ID =7A RDS(ON) < 25mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High Power and current handing capability
* Lead free product is acquired

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Datasheet Details

Part number
PED8810M
Manufacturer
semi one
File Size
226.33 KB
Datasheet
PED8810M-semione.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET semi one
semi one PED8810M-like datasheet