AP2N04I Description
The AP2N04I uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
AP2N04I is 40V N-Channel Enhancement Mode MOSFET manufactured by APM.
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The AP2N04I uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.