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AP2N04I Datasheet PDF

APM AP2N04I

The AP2N04I uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
Part No. AP2N04I
Datasheet AP2N04I Download
Manufacturer
APM
Description 40V N-Channel Enhancement Mode MOSFET
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AP2N04I datasheet page 1 preview

DESCRIPTION

GENERAL FEATURES

VDS = 40V ID =2A RDS(ON) < 180mΩ @ VGS=10V (Type:128mΩ) Application Wireless charging Boost driver LED Package Marking and Ordering Information Product ID Pack AP2N04I SOT23L

ABSOLUTE MAXIMUM RATINGS

(TC=25℃unless otherwise noted) Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM EAS PD@TA=25℃ TSTG TJ RθJA RθJC Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Marking 2N04 Rating 40 ±20 2 1.9 6 1.5 1.67 -55 to 150 -55 to 150 125 60 Qty(PCS) 3000 Units V V A A A mJ W ℃ ℃ ℃/W ℃/W AP2N04I REV1.0 永源微電子科技有限公司 1 AP2N04I 40V N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TJ=25 ℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdow...
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