DESCRIPTION
AP35P10D -100V P-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = -100V ID =-35A RDS(ON) <52mΩ @ VGS=10V (Type：40mΩ) Application Brushless motor Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP35P10D TO-252-3L AP35P10D XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ Continuous Drain Current, VGS @ -10V1 ID@TC=100℃ Continuous Drain Current, VGS @ -10V1 IDM Pulsed Drain Current2 EAS Single Pulse Avalanche Energy3 IAS Avalanche Current PD@TC=25℃ Total Power Dissipation4 TSTG Storage Temperature Range Rating -100 ±20 -35 -19 -110 360 -35 119 -55 to 150 TJ Operating Junction Temperature Range -55 to 150 RθJA Thermal Resistance Junction-Ambient 1 62.5 RθJC Thermal Resistance Junction-Case1 1.35 Qty(PCS) 2500 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP35P10D REV1.1 永源微電子科技有限公司 1 AP35P10D -100V P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ =25℃, unless otherwise noted) Symbol Parameter Test Conditions Min.
APM
