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AP35P10D - -100V P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The AP35P10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = -100V ID =-35A RDS(ON).

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Datasheet preview – AP35P10D

Datasheet Details

Part number AP35P10D
Manufacturer APM
File Size 875.11 KB
Description -100V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP35P10D Datasheet
Additional preview pages of the AP35P10D datasheet.

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Full PDF Text Transcription

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Description AP35P10D -100V P-Channel Enhancement Mode MOSFET The AP35P10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
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