DESCRIPTION
AP5P04MI -40V P-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = -40V ID =-5.0A RDS(ON) < 72mΩ @ VGS=-10V （Type：65mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP5P04MI SOT23-3L ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ IDM Continuous Drain Current, VGS @ -4.5V1 Continuous Drain Current, VGS @ -4.5V1 Pulsed Drain Current2 PD@TA=25℃ PD@TA=70℃ TSTG Total Power Dissipation3 Total Power Dissipation3 Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance Junction-Case1 Marking 5P40 Steady State -40 ±20 -5.0 -3.0 -16.1 1.32 0.84 -55 to 150 -55 to 150 125 80 Qty(PCS) 3000 Units V V A A A W W ℃ ℃ ℃/W ℃/W AP5P04MI RVE4.0 永源微電子科技有限公司 1 AP5P04MI -40V P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min.
APM
