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AP5P04MI - -40V P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The AP5P04MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = -40V ID =-5.0A RDS(ON) < 72mΩ @ VGS=-10V （Type：65mΩ）.

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Datasheet Details

Part number AP5P04MI
Manufacturer APM
File Size 1.34 MB
Description -40V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP5P04MI Datasheet
Additional preview pages of the AP5P04MI datasheet.

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Full PDF Text Transcription

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Description AP5P04MI -40V P-Channel Enhancement Mode MOSFET The AP5P04MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -40V ID =-5.0A RDS(ON) < 72mΩ @ VGS=-10V （Type：65mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP5P04MI SOT23-3L Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ IDM Continuous Drain Current, VGS @ -4.5V1 Continuous Drain Current, VGS @ -4.
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