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AP8P02MSI - -20V P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The AP8P02MSI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = -20V ID =-8.1A RDS(ON) < 32mΩ @ VGS=-4.5V (Type：24mΩ).

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Datasheet Details

Part number AP8P02MSI
Manufacturer APM
File Size 801.35 KB
Description -20V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP8P02MSI Datasheet
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Full PDF Text Transcription

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AP8P02MSI -20V P-Channel Enhancement Mode MOSFET Description The AP8P02MSI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-8.1A RDS(ON) < 32mΩ @ VGS=-4.5V (Type：24mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP8P02MSI SOT223-3L AP8P02MSI XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ PD@TA=70℃ Gate-Source Voltage Continuous Drain Current, VGS @ -4.5V1 Continuous Drain Current, VGS @ -4.
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