AP8P04SI - -40V P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

or in other Switching application.

Features

VDS = -40V ID =-8A RDS(ON) < 45mΩ @ VGS=-10V (Type：35mΩ).

APM

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AP8P04SI -40V P-Channel Enhancement Mode MOSFET by APM - Datasheet Preview — Datasheet preview – AP8P04SI

Datasheet Details

Part number	AP8P04SI
Manufacturer	APM
File Size	831.96 KB
Description	-40V P-Channel Enhancement Mode MOSFET
Datasheet	AP8P04SI Datasheet
Additional preview pages of the AP8P04SI datasheet.

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Full PDF Text Transcription

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Description AP8P04SI -40V P-Channel Enhancement Mode MOSFET The AP8P04SI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.

Published: Mar 4, 2025 |