DESCRIPTION
AP8P04SI -40V P-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = -40V ID =-8A RDS(ON) < 45mΩ @ VGS=-10V (Type：35mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP8P04SI SOT89-3L AP8P04SI XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM Continuous Drain Current, -VGS @ -10V1 Continuous Drain Current, -VGS @ -10V1 Pulsed Drain Current2 EAS Single Pulse Avalanche Energy3 PD@TC=25℃ TSTG Total Power Dissipation4 Storage Temperature Range Rating -40 ±20 -8 -5.2 -18 37 31.3 -55 to 150 TJ RθJA RθJC Operating Junction Temperature Range Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 -55 to 150 125 40 Qty(PCS) 3000 Units V V A A A mJ W ℃ ℃ ℃/W ℃/W AP8P04SI REV1.0 永源微電子科技有限公司 1 AP8P04SI -40V P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min.
APM
