Datasheet Details
| Part number | AO3406 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 313.11 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AO3406_AlphaOmegaSemiconductors.pdf |
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Overview: AO3406 30V N-Channel MOSFET General.
| Part number | AO3406 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 313.11 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AO3406_AlphaOmegaSemiconductors.pdf |
|
|
|
The AO3406 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) 30V 3.6A < 50mW < 70mW SOT23 Top View Bottom View D D D S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG G S Maximum 30 ±20 3.6 2.9 15 1.4 0.9 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 70 100 Maximum Junction-to-Lead Steady-State RqJL 63 Max 90 125 80 Units V V A W °C Units °C/W °C/W °C/W Rev 8.1: December 2023 www.aosmd.com Page 1 of 5 AO3406 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 15 VGS=10V, ID=3.6A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=2.8A gFS Forward Transconductance VDS=5V, ID=3.6A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current V 1 mA 5 ±100 nA 2 2.5 V A 36 50 mW 57 80 48 70 mW 11 S 0.79 1 V 1.5 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 210 pF 35 pF 23 pF 0.7 1.5 3.0 W SWITCHING PARAMETERS Qg(
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO3406 | N-Channel MOSFET | Kexin |
| Part Number | Description |
|---|---|
| AO3400 | 30V N-Channel MOSFET |
| AO3400A | 30V N-Channel MOSFET |
| AO3401 | 30V P-Channel MOSFET |
| AO3401A | 30V P-Channel MOSFET |
| AO3401L | P-Channel MOSFET |
| AO3402 | 30V N-Channel MOSFET |
| AO3402L | N-Channel MOSFET |
| AO3403 | 30V P-Channel MOSFET |
| AO3404 | N-Channel MOSFET |
| AO3404A | N-Channel MOSFET |