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AO3460 - N-Channel MOSFET

Description

The AO3460 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V, in the small SOT-23 footprint.

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AO3460 60V N-Channel MOSFET General Description The AO3460 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V, in the small SOT-23 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. It is ESD protected. Product Summary VDS (V) = 60V ID = 0.65A (VGS = 10V) RDS(ON) < 1.7Ω (VGS = 10V) RDS(ON) < 2Ω (VGS = 4.
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