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AO4472 - N-Channel MOSFET

Datasheet Summary

Description

The AO4472 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode www.DataSheet4U.com characteristics and ultra-low gate resistance.

This device is ideally suited for use as a low side switch in Notebook CPU core power conversion.

Features

  • VDS (V) = 30V ID = 19A (VGS = 10V) RDS(ON) < 5.2mΩ (VGS = 10V) RDS(ON) < 7.2mΩ (VGS = 4.5V) D S S S G D D D D SOIC-8 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 30 ±20 19 16 80 3 2.1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Paramete.

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Datasheet Details

Part number AO4472
Manufacturer Alpha & Omega Semiconductors
File Size 157.96 KB
Description N-Channel MOSFET
Datasheet download datasheet AO4472 Datasheet
Additional preview pages of the AO4472 datasheet.

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Full PDF Text Transcription

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AO4472 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4472 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode www.DataSheet4U.com characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. Standard Product AO4472 is Pbfree (meets ROHS & Sony 259 specifications). AO4472L is a Green Product ordering option. AO4472 and AO4472L are electrically identical. Features VDS (V) = 30V ID = 19A (VGS = 10V) RDS(ON) < 5.2mΩ (VGS = 10V) RDS(ON) < 7.2mΩ (VGS = 4.
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