Datasheet Details
| Part number | AO4476A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 307.33 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AO4476A-AlphaOmegaSemiconductors.pdf |
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Overview: AO4476A 30V N-Channel MOSFET General.
| Part number | AO4476A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 307.33 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AO4476A-AlphaOmegaSemiconductors.pdf |
|
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Product Summary The AO4476A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is suitable for use as a high side switch in SMPS and general purpose applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 30V 15A < 7.7mW < 10.8mW D SOIC-8 D G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 15 12 110 27 36 3.1 2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 31 59 Maximum Junction-to-Lead Steady-State RqJL 16 Max 40 75 24 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev1.1: August 2023 www.aosmd.com Page 1 of 6 AO4476A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 mA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 1.5 1.98 2.5 V ID(ON) On state drain current VGS=10V, VDS=5V 110 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=15A TJ=125°C 6.4 7.7 mW 10 12 VGS=4.5V, ID=12A 8.6 10.8 mW gFS Forward Transconductance VDS=5V, ID=15A 45 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.74 1 V IS Maximum Body-Diode Continuous Current 4 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate res
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO4476A | N-Channel MOSFET | Kexin |
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AO4476A | 30V N-Channel MOSFET | VBsemi |
|
AO4476 | N-Channel MOSFET | Kexin |
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