Datasheet Details
| Part number | AO4476 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 106.30 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 AO4476 Datasheet
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General Description
The AO4476/L uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.
AO4476 and AO4476L are electrically identical.
Key Features
- VDS (V) = 30V ID = 15A (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 10V) RDS(ON) < 17mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested S D S D S D G D SOIC-8 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C IDSM Pulsed Drain Current B IDM Power Dissipation TA=25°C TA=70°C PD Avalanche Current B IAR Repetitive avalanche energy 0.3mH B EAR Junction and.
