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AO4830 - 80V Dual N-Channel MOSFET

General Description

The AO4830 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

This device is suitable for use as a load switch or in PWM applications.

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AO4830 80V Dual N-Channel MOSFET General Description The AO4830 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications. Product Summary VDS (V) = 80V ID = 3.5A RDS(ON) < 75mΩ (VGS = 10V) (VGS = 10V) 100% UIS Tested 100% Rg Tested Top View SOIC-8 Bottom View Top View S2 G2 S1 G1 D2 D2 D1 D1 G1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH C ID IDM IAR EAR Power Dissipation B TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 80 ±30 3.5 2.